Atomic layer deposition (ALD) for environmental protection and whisker mitigation of electronic assemblies

نویسندگان

چکیده

Abstract In this study, we demonstrate how metal-oxide thin-film conformal coatings grown by atomic layer deposition (ALD) can be exploited as an effective approach to mitigate tin whisker growth on printed circuit boards. First, study the effect of different ALD and process parameters Sn–Cu-electroplated test coupons, combining optical imaging scanning electron microscopy evaluating distribution surface. On these samples, found that one important parameter in mitigating is time interval between electroplating coating (pre-coat time), which should kept order few days (2, based our results). Atomic layer-deposited were also toward formation storage conditions. Furthermore, show limiting need for outgassing electronic assemblies (PCBAs), additional stringent requirement applications space industry. Our experimental results thus demonstrated a suitable technique aerospace applications, both terms degassing mitigation.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Atomic layer deposition (ALD): from precursors to thin film structures

The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processes developed for films used in microelectronics are described as examples. These include depositio...

متن کامل

Surface Chemistry of Copper(I) Acetamidinates in Connection with Atomic Layer Deposition (ALD) Processes

Given the high stability of amidines, they have long been considered good choices as bidentate ligands in organometallic compounds. Early uses of metal amidinates have been reported in catalysis to promote polymerizations and other related reactions. 3 More recently, metal amidinates have been developed as promising precursors for the deposition of solid thin films. 8 They have proven particula...

متن کامل

High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)

High-performance pentacene field-effect transistors have been fabricated using Al2O3 as a gate dielectric material grown by atomic layer deposition (ALD). Hole mobility values of 1.5 ± 0.2 cm/V s and 0.9 ± 0.1 cm/V s were obtained when using heavily n-doped silicon (n-Si) and ITO-coated glass as gate electrodes, respectively. These transistors were operated in enhancement mode with a zero turn-...

متن کامل

Atomic Layer Deposition of TiO

Additional resources and features associated with this article are available within the HTML version: • Supporting Information • Links to the 4 articles that cite this article, as of the time of this article download • Access to high resolution figures • Links to articles and content related to this article • Copyright permission to reproduce figures and/or text from this article High surface a...

متن کامل

Synthesis and characterization of copper(I) amidinates as precursors for atomic layer deposition (ALD) of copper metal.

A series of copper(I) amidinates of the general type [(R'NC(R)NR'')Cu](2) (R' and R'' = n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl; R = methyl, n-butyl) have been synthesized and characterized. These compounds are planar dimers, bridged by nearly linear N-Cu-N bonds. Their properties (volatility, low melting point, high thermal stability, and self-limited surface reactivity) ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Ceas Space Journal

سال: 2021

ISSN: ['1868-2502', '1868-2510']

DOI: https://doi.org/10.1007/s12567-021-00393-1